Devarapalli, Rami Reddy and Shinde, Deodatta R. and More, M. A. and Shelke, M. V. (2012) Vertical nanostructured arrays of SiNWs/ZnO nanostructures as high performance electron field emitters. In: Interdisceplinary Symposium on Materials Chemistry(ISMC 2012), 11-15th December,2012, BARC,Mumbai. (Submitted)

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Heterojunctions of nanostructured building blocks are essential for the development of complex devices and advanced applications due to their role as either functional or interconnecting elements. Heterojunctions based on nanostructured silicon hold the key of next generation devices as silicon has long been the essential material for microelectronic technology with established device processing protocols. We have prepared the vertical heterojunction arrays of two nanostructured semiconducting materials i.e. Si and ZnO by a simple and cost effective method. The as prepared vertical heterojunction nanostructured materials comprised of Silicon nanowires (SiNWs) and ZnO nanostructures (nanorods and multipods) shows the enhanced field emission properties. We have observed that the field emission properties of the as synthesized heterojunction materials are superior to the normal SiNWs. Our results show that these SiNWs/ZnO nanostructures are highly efficient and stable field emitters.

Item Type: Conference or Workshop Item (Poster)
Subjects: Materials Chemistry
Depositing User: V Rami Reddy Devarapalli
Date Deposited: 05 Feb 2013 11:46
Last Modified: 03 Mar 2015 09:46

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